The VLMR51, VLMW51, VLMY51, and VLMK51 devices are based on AllnGaP and InGan on silicon technology. The LED devices offer up to 738 mW power dissipation, enabling about 200 mA drive currents, and offer a luminous intensity of 2,850-9,750 mcd and a luminous flux of 8.5 to 30.6 lm.
The LEDs are AEC-Q101 qualified, and include a half-intensity angle of 60 and a luminous flux ratio for each packing unit of less than 1.6. The LED devices comply with RoHS directive 2002/95/EC.
The VLMx51 series is suitable for symbol and signal illumination, exterior and interior automotive lighting, architectural lighting, backlighting, decorative lighting, and other types of lighting applications.
