NanoGaN, which is owned by IQE, has announced that it has received two opto semiconductor related separate patents for the production of advanced blue and green lasers and LEDs.
The patent is titled growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials ; the patent number is 2008-549935. The company received the patent from the Japan Patent Office to NanoGaN.
By receiving the patent, NanoGaN is now protected for producing high quality, free-standing gallium nitride opto-semiconductor substrates, which are the base material for manufacturing high quality blue and green semiconductor lasers and ultra high brightness LEDs for Solid State Lighting SSL
The second patent that has been granted has come from the UK Patent office; No.2446471, titled production of semiconductor devices . This will protect the manufacturing of semiconductor devices including laser diodes, LEDs and solar PV cells, directly onto the nanocolumn platform, thus expanding the number and type of substrates that can be used for epitaxy.
Sources at the company say that by getting these patents, the company is now empowered to cover all of the essential technologies for producing free-standing gallium nitride using our proprietary Hydride Vapour Phase Epitaxy HVPE process and nanocolumn growth technique.
