CSR establishes overseas semiconductor R & D center CSR establishes overseas semiconductor R & D center

Recently, CSR established a semiconductor R & D center at Dynex Corporation in Lincoln, UK, and held the launch ceremony of the Phase I production line of 6-inch IGBT chips at Dynex, laying a more solid foundation for the accomplishment of the strategic objective of leading the world in power semiconductor devices. CSR Chairman Zhao Xiaogang attended the ceremony and pinned great hope on the development of CSR s IGBT sector.

CSR obtained strategic resources by acquiring Dynex Semiconductor Corporation in October 2008 to support CSR s existing power semiconductor sector. To seek greater development, CSR mapped out the strategic objective of leading the world in power semiconductor devices, completed the refinancing of Dynex in late 2009, further intensified investments in the power semiconductor industry, focused on improving the production capacity of 6-inch IGBT chips; and established a world-class power semiconductor R & D center to constantly roll out world leading IGBT devices.

In recent years, power and electronic technologies have grown rapidly, and power semiconductors with blocking capability have become the mainstream of the market. IGBT has become the prioritized core electronic component for motor controllers and power inverters, been used extensively in rail traction systems and become a major support for energy conservation technology and the low carbon economy. Large-power IGBT, which caters to the current needs of industries such as railway and mass transit, wind power and electric vehicle, is a key scientific and technological project supported by national industrial policies.

According to the source, the Chinese railway and mass transit market is facing an unprecedented development opportunity, developing the low carbon economy has become a global consensus for development, power semiconductor devices will gain unprecedented development, new energy products will be favored by the market, and market demands for IGBT devices will be robust.